| 摘要 |
<p>PURPOSE: To improve an electron emitting characteristics by forming an emitter and a joining depletion area partially arranged on a main surface of a diamond semiconductor electron emitter. CONSTITUTION: A diamond semiconductor electron emitter 102 has an emitting surface 120 to emit an electron and a main surface 130. An emitter 102 and a joining depletion area 110 partially arranged on the surface 130, are also formed on a conductive/semiconductive material layer 10. At this time, a support base board 101 having the surface 130 is arranged, and the emitter 102 is selectively formed, and is arranged on the main surface 130 of a base board 101. An insulating material layer 103 is arranged on the surface 130, and a material layer 104 is accumulated on a layer 103. Joining having a depletion area width is also formed in a joining part between the emitter 102 and the material layer 104, and an anode 108 is arranged separately from the emitting surface 120, and emitting electrons are gathered. Then, since a flow of the electrons to the emitting surface 120 is controlled by impressing proper voltage on the material layer 104, an excellent electron emitting characteristic can be obtained.</p> |
