| 摘要 |
<p>PURPOSE:To enlarge photo current per unit area of a Schottky type photo detector by a method wherein an electrode on the metal side consisting of gold, palladium, platinum silicide, etc., is formed on the Si substrate to make the first Schottky junction to be generated, a polycrystalline or a single crystal Si layer is formed thereon to constitute the second Schottky junction, and they are connected to the substrate electrically. CONSTITUTION:An N type region 4 to prevent increase of leakage current and reduction of withstand voltage at the circumference of the Schottky junction 3 to be formed afterward is formed by diffusion in a P type Si substrate 1, a metal or a metal silicide of gold, palladium, platinum silicide, etc., is evaporated on the surface of the substrate 1 to obtain the electrode 2 on the metal side putting the end part on the region 4 thereof, and the first Schottky junction 3 is made to be generated between the substrate 1. Then the P type Si layer 6 consisting of polycrystalline Si or single crystal Si is accumulated on the electrode 2 to make the second Schottky junction 7 to be generated between the electrode 2, the layer 6 is connected to the substrate 1, and an electric power source 5 is provided between the electrode 2 and the substrate 1.</p> |
