| 摘要 |
PURPOSE:To enable a two-dimensionally shaped etching mask pattern to be formed by a method wherein two functions, a catalyst producing function and a latent image forming function, of chemical amplification resist are separately given to two layers respectively. CONSTITUTION:An aluminum film 5 is formed on a silicon semiconductor substrate 6, and a lower resist layer 4, a catalyst producing layer 3, and a latent image forming layer 2 are successively formed. In succession, this specimen is irradiated with an electron beam as activating chemical rays through the latent image forming layer 2 to draw a prescribed wiring pattern for the formation of a catalyst producing part 7. Then, the specimen is baked to diffuse catalyst into the latent image forming layer 2 from the catalyst producing part 7 to form a latent image 8 corresponding to the pattern concerned. A developed pattern 9 can be obtained by developing the latent image forming layer 2, the catalyst producing layer 3 and the lower resist layer 4 are etched through the developed pattern 9 as a mask to obtain a resist pattern 10, and a wiring layer 5 is dry-etched using the resist pattern 10 as mask. By this setup, fine work can be carried out high in accuracy. |
