| 摘要 |
PURPOSE: To improve processing quantity of the vapor deposition of silicon on a single substrate by mounting the substrate in a vacuum chamber, controlling the temperature of the substrate between the temperature having specified values and adding a silicon precursor material gas under a pressure between teh specified values until the silicon layer having a desired thickness is obtained. CONSTITUTION: In order to improve the vapor-deposition speed of doped silicon or silicon that is not doped, the pressure in a chamber is maintained at about 10-350Torr. The accurate crystallographic property of the silicon depends on the temperature of the vapor deposition. In the process of forming a silicon layer that is not doped on a silicon wafer, hydrogen is fed into a chamber, and silane is added after the wafer temperature has reaches a value between 600 deg.C and 750 deg.C. Thus, the pressure between about 10Torr and 350Torr is maintained in the vacuum chamber. In this way, the mixture of polycrystalline silicon and amorphous silicon undergoes vapor deposition at a speed of 2,000Åminute.
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