| 摘要 |
<p>PURPOSE:To obtain high bonding performance by making a conductive metal bonding foil consisting of a high-purity aluminum foil and a copper foil. CONSTITUTION:A circuit substrate 1 mounted with a semiconductor forms an interconnecting circuit by etching a conductive bonding foil which is formed by laminating an insulating layer 4 and a conductive metal bonding foil successively. At that time, the conductive bonding foil becomes a bonding foil consisting of a high-purity aluminum foil 3' and a copper foil 2, and the aluminum content of the high-purity aluminum foil 3' is 99wt.%. The high-purity aluminum foil 3' sinks down in wire bonding due to the soft surface of aluminum junction. Therefore, relatively wide range of bonding conditions can be permitted. As a result, high bonding performance can be obtained.</p> |
