| 摘要 |
PURPOSE:To enable patterns to be restrained from varying in area between shots even if patterns are formed through a photolithography method where a partial light exposure is employed CONSTITUTION:Positive-type photoresist is applied onto an Al film 11, a pattern, which determines either the length or the width of openings 13 and 14 that are to be formed, is subjected to partial light exposure to provide an opening 15 to the Al film 11. Then, an insulating film and a second Al film 16 are deposited on the Al film 16, and negative type photoresist is applied onto the Al film 16. A pattern which determines either the width or the length of the openings 13 and 14 is subjected to partial light exposure to provide openings 17 and 18 to the Al film 16. Therefore, the opposed sides of the opening 14 are longer than the corresponding opposed sides of the opening 13, but the other opposed sides of the opening 14 are shorter than the corresponding opposed sides of the opening 13, so that the openings 13 and 14 are equal in area. |
