| 摘要 |
PURPOSE:To improve characteristics of a device by isolating fine elements of the order of submicrons by a very simple method without using a LOCOS method. CONSTITUTION:A low concentration P-type semiconductor region 3 to become a punchthrough stopper is formed on the entire region of a MOS transistor and an isolation oxide film 4, and a P-type semiconductor region 2 to become a channel stopper is formed on a lower part of the film 4. Further, when a sidewall film 9 is formed on the side of a gate electrode 6 of a transistor having an LDD structure, it is simultaneously formed on the side of the film 4. Accordingly, submicron isolation can be realized by a very simple method, and a MOS semiconductor device having high element density, and high speed and excellent device characteristics can be provided. |
