| 摘要 |
PURPOSE:To increase the area of a capacitor by forming irregularities shaped in lateral stripes in part of the side of a storage node electrode. CONSTITUTION:After forming a storage node contact 8, a resist is applied, and exposed to light by optical lithography with a mask of a pattern which is rather smaller than that of the storage node electrode. If monochromatic light such as of an excimer laser beam is used as the light source for the exposure, the light incident upon the photoresist and the reflected light from the ground interfere with each other, generating a standing wave in the resist. Thus, the light intensity within the resist periodically varies in the depth direction. Accordingly, on the side of the photoresist pattern R irregularities are formed in lateral stripes. If an LPD film 9 is deposited on it, the pattern shape of the resist is transferred, and the irregularities shaped in lateral stripes are transferred to the side of the LPD film as a pattern transfer film if a storage node electrode is formed after removal of the resist. A polycrystalline silicon film is deposited, and an electrode 10 is formed after arsenic doping. |
