| 摘要 |
<p>PURPOSE:To obtain a highly precise resistance value, and to obtain the delay circuit of high precision by forming a transistor circuit and a resistor on the same silicon substrate, and simultaneously, forming the resistor of a thin film resistor. CONSTITUTION:The resistor 1 for delay and the transistor circuit are formed on the same silicon substrate, and simultaneously, the resistor is formed of the thin film resistor. Namely, the resistor 1 consisting of the thin film resistor and the transistor circuit consisting of MOS transistors 3 to 8, CMOS inverters 9, 10, the CMOS inverter 11 of a Schmitt trigger type, and a CMOS NAND gate 12 are formed on the same substrate (namely, in the same integrated circuit). The resistor 1 and a capacitor 2 are connected through a constant current circuit constituted of the MOS transistors 5, 6, and an input signal is delayed on the basis of a time constant determined by the resistor 1 and the capacitor 2. Henceforth, the MOS transistor 8 too is turned into an ON state, and the electric charge of the capacitor 2 is discharged through this.</p> |
