| 摘要 |
PURPOSE: To enhance the sensitivity for exposure and to improve pattern quality by removing a protecting group from polymer, so that the difference in thicknesses between an exposed region and a non-exposed region becomes less than a specified value % of the thickness of the resist at the non-exposed region in the resist which comprises a polymer having a protecting group. CONSTITUTION: A chemically amplified resist containing poly(4-t-butoxycarbonyl- oxystyrene) of a polymer having a protecting group is formed on a device substrate. Thereafter, processing for removing a substantial part of the protecting group is performed. The degree of removal is set, so that the difference in thicknesses between the exposure region immediately before development and the non-exposed region becomes less than 30% of the thickness of the resist at the non-exposed region immediately prior to the development. Thus, the exposure sensitivity an be increased by the specified processing for the chemically amplified resist, the pattern quality can be improved at the same time, and the performance controlling characteristic when the pattern transfer is performed by etching can be improved. |
