| 摘要 |
The semiconduct device capacitor useful as VLSI grode DRAM cell is mfd. by (a) forming a field oxide film (3), a gate (5) a source/ drain region (4) on the fixed region of a semiconductor substrate (1), (b) laminating a first oxide film (7), a first nitride film (8) and a second oxide film (9) on the whole surface, (c) selectively etching the layers (7,8,9) to expose the fixed part of the region (4), (d) etching the substrate of the region (4) to form a trench, (e) forming a first dielectric film (10) on the inner wall of the trench, (f) forming a second nitride film side wall (8a) on the side wall of the trench, (g) burying the inner part with a first polysilicon (11), (h) etching-back the polysilicon (11), and removing off the dielectric film (10), (i) forming a second dielectric film (10a) on the surface of the polysilicon (11), (j) forming a second polysilicon (12) on the whole surface, and patterning it, and (k) removing off the oxide film (9) and the nitride film (8), forming a third dielectric film (14) on the whole surface of the polysilicon (12), and forming a plate electrode on the film (14).
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