| 摘要 |
PURPOSE:To enable to operate the titled photo-functioning element by a low current at room temperature as well as to increase efficiency by applying light from the outside by a method wherein a photo waveguide path is formed on a planar type buried semiconductor laser, and, at the same time, a saturable absorption region is provided on the photo waveguide path. CONSTITUTION:A wafer is formed on an N type InP substrate 10 by applying photo resist on the DH substrate whereon an N type InP buffer layer 11, a non- doped InGaAsP active layer 12 and a clad layer 13 of P type InP were formed. Subsequently, the first current blocking layer 14 of P type InP and the second current blocking layer 15 of N type InP are formed, and then a P type InP buried layer 16 and a P type InGaAsP cap layer 17 are formed. The first and the second current blocking layers 14 and 15 are not grown on the first mesa stripe 20 having the narrower width, but the upper surface of the second mesa stripe 21 and the coupled part 22 are covered by the first and the second current blocking layer. |
