| 摘要 |
PURPOSE:To manufacture a CZ high resistance wafer having high resistance and the uniform distribution of specific resistance within a wafer surface by a method wherein single crystal over the specific oxygen density is used, and a heat treatment is performed under a specific condition. CONSTITUTION:A P type single crystal pulled up by a CZ method is prepared and processed into a wafer by performing a slicing and lapping. One wherein the lattice oxygen density is 1.5X10<18>cm<-3> or more is used as the single crystal. Next, this wafer is heat-treated at the temperature range 550-900 deg.C for 30hr or more of the treatment time. Thereby, a CZ high resistance wafer having high resistance and the uniform distribution of specific resistance within a wafer surface can be manufactured. |
