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发明名称
JUNCTION FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING
摘要
申请公布号
EP0429950(A3)
申请公布日期
1993.08.11
申请号
EP19900121742
申请日期
1990.11.13
申请人
GTE LABORATORIES INCORPORATED
发明人
BULAT, EMEL S.;TABASKY, MARVIN J.
分类号
H01L29/808;H01L21/337;H01L29/45;H01L29/772;(IPC1-7):H01L21/337;H01L21/285;H01L29/165
主分类号
H01L29/808
代理机构
代理人
主权项
地址
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