发明名称 |
Method of making a semiconductor film where the hydrogen and/or fluorine is released prior to ion beam crystallization |
摘要 |
Provided herein is a process for producing a polycrystalline semiconductor film at a low temperature. The process comprises the steps of depositing on a glass substrate by plasma CVD an amorphous silicon film containing the crystal phase as well as hydrogen, heating the film using a heater, thereby releasing hydrogen from the film, and growing the crystal phase by silicon ion implantation, thereby changing the amorphous silicon film into a polycrystalline silicon film containing crystal grains. The releasing of hydrogen from the amorphous silicon film permits the polycrystalline silicon film to be formed at a lower temperature than before without the growth of crystal phase being inhibited.
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申请公布号 |
US5234843(A) |
申请公布日期 |
1993.08.10 |
申请号 |
US19920836796 |
申请日期 |
1992.01.31 |
申请人 |
NIPPON SHEET GLASS CO., LTD. |
发明人 |
OYOSHI, KEIJI;YAMAOKA, TOMONORI |
分类号 |
H01L21/20;H01L21/205;H01L21/265;H01L21/30;H01L21/84 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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