发明名称 |
Method of making bipolar transistor with reduced topography |
摘要 |
A vertical bipolar transistor is constructed with reduced step height by codeposition of a polysilicon base contact member and an epitaxial device layer, thereby placing the base contact below the device surface, and by the use of a doped glass layer as a dopant source for the base contact and as a dopant source to provide a continuous conductive path to the base, and as the dielectric separating the base contact from the emitter contact, and as an etch stop when forming the base implantation aperture.
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申请公布号 |
US5234846(A) |
申请公布日期 |
1993.08.10 |
申请号 |
US19920876597 |
申请日期 |
1992.04.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHU, SHAO-FU S.;KIM, KYONG-MIN;SHAW-NING, MEI;NASTASI, VICTOR R.;RATANAPHANYARAT, SOMNUK |
分类号 |
H01L21/225;H01L21/285;H01L21/331;H01L29/06;H01L29/10 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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