| 摘要 |
PURPOSE: To obtain a method for producing a memory cell which is provided with an access transistor, connected in series with a double gate. CONSTITUTION: A this wire is formed in a structure, in which a non-conductive film and conductive film constituting a gate non-conductor 210 and a floating gate are laminated. A spacer is formed on the side surface of the thin wire of laminated structure. The spacer on the side where a drain is manufactured is removed, and conductive ions which differ from those of substrate are implanted, while remaining spacers and this wire are used as a mask, so that the offset source and drains 214 and 216 are formed with respect to the thin wire. Further remaining spacers are removed, and a thin conductive film is formed on the source and the drain. A conductive thin wire 206a is formed vertically against the diffused source and drain zone, and the thin wire of laminated structure is etched, while the conductive thin wire is used as a mask.
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