| 摘要 |
<p>PURPOSE:To improve the degree of integration with a low power consumption by providing a data storage means which is connected to one bit line through a single input/output node and a single switching means in a memory cell. CONSTITUTION:A data storage circuit consists of two cross coupled inverters made up with transistors Q1 and Q2 and resistances R1 and R2. A common connection node N1 of the transistor Q2 and the resistance R2 are configured with a single input/output node of the data storage circuit. A transistor Q3 is connected between the node N1 and a single bit line BL and operates in accordance with the signals on word lines WLi. A transistor Q7 operates in accordance with output column selection signals Yi of a column recorder 6. In accordance with column address signals CAO to CAn, a source line potential controlling circuit 8 gives a prescribed intermediate potential or a ground potential to the source of the transistors Q1 and Q2. Having this constitution, the degree of integration in a static random memory is improved.</p> |
