| 摘要 |
PURPOSE: To facilitate production of embedding laser by removing a mask on a substrate which is subjected to be applied with epitaxy in an epitaxy chamber, positioning it freely and allowing different component element layers of photoelectric device to grow epitaxially. CONSTITUTION: In production of the photoelectric device, a substrate S is placed in an epitaxy chamber, and a mask M is also placed thereon, and then different continuous layers on a material to be obtained are grown epitaxially through the same mask. For example, a laser-type photoelectric element is changed through epitaxial growth into a first containment layer 1, one or more active layers 2 of laser, a second containment layer 3, a contact layer 4, and a masking layer 5. Then, after the mask M is removed from the surface of the substrate S, a layer made of containment substance is formed entirely thereon through epitaxial growth, and the masking layer 5 on the contact layer 4 is removed to expose the contact layer 4. |
