HEAT TREATING METHOD FOR SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE:To solve a problem of difficulty of controlling a temperature of a wafer when using a pyrometer due to a difference between an output of the pyrometer and an actual temperature of the wafer when a semiconductor device is manufactured by using process gas for absorbing an infrared ray in a special infrared region. CONSTITUTION:A method for heat-treating a semiconductor substrate employs the following method. That is, heat-treating conditions for obtaining a desired temperature profile of the substrate are previously obtained by heat-treating the substrate in inert gas which does not absorb an infrared ray in a special infrared region. The substrate is heat-treated in process gas according to the obtained conditions.