| 摘要 |
PURPOSE:To provide a multilayer wiring structure wherein a dissimilar metal interface does not exist in a via part, a via resistance is low, stress migration reliability is high and electromigration reliability is high and a manufacturing method thereof. CONSTITUTION:A lower layer metallic wiring 3 and an upper layer metallic wiring 7 are constituted of a lamination of aluminum alloy films 3-2, 7-1 and high melting point metallic alloy films 3-1, 7-2. An aluminum alloy film is exposed in a bottom part and an upper part of a via hole formed in a layer insulating film 4. A plug 6 filling the via hole is formed of aluminum and a connection at a via part is constituted of a contact between aluminum alloy and aluminum. |
