发明名称 HIGH-FREQUENCY HIGH-POWER TRANSISTOR
摘要 PURPOSE:To directly solder the matching capacitors of input-output circuits in a high-frequency high-power transistor to the input and output side substrates of the transistor. CONSTITUTION:Notches 1a,..., 6a, 6b are provided in the necessary positions of respective leads 1-6 of the emitter, collector and base of a high-frequency high-power transistor, matching capacitors 14 are arranged in openings 15-18 formed of these notches, and the matching capacitors 14 are directly soldered to the ground patterns 12, 13 of input and output side substrates 8, 9.
申请公布号 JPH05198715(A) 申请公布日期 1993.08.06
申请号 JP19920010018 申请日期 1992.01.23
申请人 MITSUBISHI ELECTRIC CORP 发明人 OKAWA AKIHISA
分类号 H01G4/228;H01G4/40;H01L23/48 主分类号 H01G4/228
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