| 摘要 |
PURPOSE:To impart a phase shift effect to an upper layer pattern, and to form a microfine pattern by successively applying a lower layer resist and the upper layer resist of a thin film onto a foundation substrate and forming the light shielding section of a mask used for exposing the lower layer resist in a size smaller than the upper layer pattern. CONSTITUTION:The upper section of a foundation substrate 1 is coated with a resist for (i) beams as a lower layer resist 2, the resist is pre-baked, and a resist for an excimer is applied thinly as an upper layer resist 3. The phase of (i) beams passing in the upper layer resist changes at 120-240 deg.C in the film thickness. The upper layer resist 3 is turned, and aligned with upper layer patterns 3A by an (i) beam stepper, and the lower layer resist is exposed. The light shielding section of a mask used is made smaller than the upper layer pattern A in the alignment accuracy or more of the stepper, and a phase shift effect is imparted to the upper layer pattern. The lower layer resist 2 is developed with alkali, thus forming lower layer patterns 2A. |
