| 摘要 |
PURPOSE: To provide interconnection of hetrogenously doped diffusion regions so formed on a substrate, comprising an interconnection layer, assigned between two diffusion regions that two diffusion regions are interconnected. CONSTITUTION: An interconnection 132 is formed with a mask interface where an N+-dopant and P+-dopant regions 114a, 114b, 112a, and 112b are present so that no N+ and P+-dopand infiltrate into an interconnection region, thereby without additional masking and etching step, the interconnection region is formed. Once the interconnection region is formed, an interconnection layer is formed in coating and baking processes. The interconnection layer provides a Schottky barrier and an ohmic contact.
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