| 摘要 |
PURPOSE:To make the capacitance associated with the wiring within a sense- amplifier approximately uniform by placing the gates, the sources and the drains of two transistors(TR) of a sense-amplifier at desired locations and connecting them with prescribed wires. CONSTITUTION:Gates G1 and G2 of two TRs of a sense-amplifier are wired along the extension line of an aluminum wire SBL1 and the inverse of SBL1 and sources S1 and S2 and drains D1 and D2 are placed in-the same side with respect to the gates G1 and G2. Moreover, the sources S1 and S2 are connected to an aluminum wire 2, the drains D1 and D2 as well as the gates G1 and G2 are connected to a wire BL1 and the inverse of BL1 so as to form the sense-amplifier. Having this placement and the connection, the capacitance associated with each bit line of a memory cell array in the memory device becomes approximately equal, the capacitance associated with each wire within the sense-amplifier is made uniform and the error, which may occur during the reading of the contents of the memory cell connected to the bit lines, is prevented. |
