| 摘要 |
<p>PURPOSE:To provide the pattern forming method capable of suppressing the film reduction at the center section of a resist pattern and capable of forming the good pattern even when the half-tone phase shift method is used. CONSTITUTION:In the pattern forming method performing exposure and development for a photosensitive resin film 23 formed on a Si substrate 22 with an exposure mask formed with a mask pattern made of a semi-transparent material (Si) 21 giving the optical phase difference to the transmitted light on a translucent substrate (SiO2) 20 to form a desired pattern, a positive type resist keeping the film remaining ratio of 90% or above when the whole surface of the photosensitive resin film 23 is irradiated with the same light intensity as the maximum light intensity E' obtained at the center section of the mask pattern while the light intensity E corresponding to the image intensity Ie at the edge portion of the pattern is given is used for the photosensitive resin film 23.</p> |
