| 摘要 |
<p>PURPOSE:To eliminate the shorting between a gate line and the gate line and picture element electrode by forming insulating films respectively between the gate line and the picture element electrode and between the picture element electrode and a data line. CONSTITUTION:This panel has the 1st insulating film, i.e., gate insulating film 13, formed over nearly the entire surface on a transparent substrate 11 so as to cover the gate line 12. The transparent picture element electrode 19 is formed along the gate line 12 and the data line 21 and a thin-film transistor (TFT) T is formed at the intersected part of the gate line 12 and the data line 21. Further, the transparent 2nd insulating film 20 consisting of a thick film of SiN formed nearly over the entire surface of the gate insulating film 13 is provided thereon. The TFT T and the picture element electrode 19 are covered with the 2nd insulating film 20. The 2nd insulating film 20 is formed as a flattened film, the front surface of which is formed as a flat surface.</p> |
