| 摘要 |
<p>PURPOSE:To expose a device pattern including a minute fine pattern precisely and quickly in the exposure method of charged-particle beams. CONSTITUTION:Data for block exposure for an element pattern repeatedly exposure from design data and data for variable rectangular exposure for a rectangular element pattern different from the element pattern are extracted (ST-7). Data for fine-line block exposure for a small fine-line element pattern are extracted from data for the variable rectangular exposure (ST-9), and mask data including the information of the position, size and shape of an opening on a beam shaping mask are extracted on the basis of these extracted data for each exposure. The beam shaping mask is manufactured on the basis of the mask data (ST-12), and charged-particle beams are passed selectively through one of an opening for block exposure, an opening for variable rectangular exposure and an opening for fine-line block exposure on the basis of data for each exposure, thus exposing a device pattern on an object.</p> |
