| 摘要 |
PURPOSE: To provide a programmable resistance element, which can be used both as a resistance element in such device as a resistor ladder-type device used for a neuron circuit network or an analogue-digital converter, and as a non-volatile memory. CONSTITUTION: A channel 16 comprising a gallium arsenide layer is provided, and a programming barrier wall 18 is assigned outside a channel. An accumulation gate 20 comprising a genuine gallium arsenide layer is assigned outside the programming barrier wall, and an insulator 22 comprising an aluminum- gallium arsenide layer is assigned outside the accumulation gate. A first contact body 26 and a second contact body 28 assigned away from each other contact to the channel.
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