POLY-SI GATE ELECTRODE FOR MIS-TYPE SEMICONDUCTOR ELEMENT,申请号JP19920204381-传众专利搜索

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发明名称	POLY-SI GATE ELECTRODE FOR MIS-TYPE SEMICONDUCTOR ELEMENT
摘要
申请公布号	JPH05198795(A)	申请公布日期	1993.08.06
申请号	JP19920204381	申请日期	1992.07.08
申请人	RICOH CO LTD	发明人	ISHIDA MAMORU
分类号	H01L29/78;H01L21/02;H01L21/28;H01L29/423;H01L29/43;H01L29/49	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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