发明名称 MANUFACTURE OF SEMICONDUCTOR CERAMIC VARISTOR
摘要 <p>PURPOSE:To obtain a product which shows excellent characteristics in a low voltage range by a method wherein, after various additives are added and mixed with SrTiO3, the mixture is sintered under a high temperature and subjected to a thermal treatment in a reducing atmosphere to make the material semi-conductive and then a thermal treatment is performed in the air. CONSTITUTION:0.2-5.0wt.% of sintering accelerator containing SiO2, 0.05-2.0wt.% of Nb2O5 semi-conduction accelerator and 0.1-1.5wt.% of NaNbO3 or NaTaO3 particle growth control agent are added to SrTiO3 which is a main component and mixed. The mixture is subjected to compression molding and sintered in the air under a temperature of 1350-1500 deg.C and reduced in a reducing atmosphere under a temperature of 1000-1400 deg.C. Further, a thermal treatment is performed in the air under a temperature of 850-1200 deg.C. With this constitution, a low voltage strontium titanate semiconductor apparatus varistor which has a large electrostatic capacitance and excellent characteristics can be obtained.</p>
申请公布号 JPH05198408(A) 申请公布日期 1993.08.06
申请号 JP19920009752 申请日期 1992.01.23
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 IGA ATSUSHI;ITO MASAHIRO
分类号 H01C7/10;H01C17/00;H01F17/06;H01G4/12 主分类号 H01C7/10
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