| 摘要 |
<p>PURPOSE:To eliminate a die bonding failure due to burr generated in the case of separating chips of a high output semiconductor device. CONSTITUTION:A first chip isolation groove 2 is formed on a semiconductor substrate 1, a metallized layer 3 is formed in the groove 2, a second chip isolation groove 4 is formed from a rear surface, and a metallized layer 5 is formed in the groove 4. Further, after the substrate is reduced to a desired thickness, an inter-chip reinforcing thick metallized layer 6 is formed on a rear surface, and the layers 3, 5 in the grooves 2, 4 are diced. Thus, since burrs 7 at the time of dicing are contained in the grooves 2, 4, a die bonding failure can be eliminated.</p> |
