| 摘要 |
<p>PURPOSE:To prevent a pattern transfer at the edge sections of phase shifter layers. CONSTITUTION:The first and second phase shifter layers 13a, 13b are provided alternately at multiple light transmission sections between multiple shading patterns 12, both the first and second phase shifter layers 13a, 13b have the relative phase difference alpha of pi/2 or below against a mask substrate 11, and the first and second phase shifter layers 13a, 13b have the phase difference 2alpha of pi or below between them. Since the relative phase difference against the mask substrate 11 is made pi/2 or below, the light intensity on a wafer at the edge sections of the phase shifter layers 13a, 13b is increased, and a pattern transfer at the edge sections is prevented.</p> |
