发明名称 SEMICONDUCTOR LASER DEVICE AND METHOD OF MAKING SAME
摘要 A semiconductor laser device includes a laser chip and a submount. The laser chip includes a mesa-shaped semiconductor substrate having a surface on which a plurality of layers required for generating laser oscillations are epitaxially grown to be conformal to the surface contour of the substrate. The laser chip is soldered upside down to the submount. If solder rises up along the side surfaces of the laser chip, it does not short-circuit a PN junction contained in the epitaxially grown layers.
申请公布号 CA2088754(A1) 申请公布日期 1993.08.05
申请号 CA19932088754 申请日期 1993.02.03
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 OTA, YOICHIRO
分类号 H01L33/10;H01L33/14;H01L33/20;H01L33/30;H01L33/44;H01L33/62;H01L33/64;H01S5/00;H01S5/02;H01S5/042;(IPC1-7):H01S3/025;H01S3/085 主分类号 H01L33/10
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