摘要 |
<p>Optical memory device has a substrate, an optical memory recording layer (I) and an O-free dielectric layer (II). (I) is pref. one of TeOx (x= 0-1), TeC and TeSe; or a rare earth transition metal alloy; or one of MnBi and MnBiCu. (II) is pref. Al nitride or Si nitride. Pref. device also includes a reflecting film on (II) of stainless steel, Ni, Ti or TiN, or Cu, Ag, Al or Au. Substrate is pref. glass polycarbonate, acrylic resin or epoxy resin. In laser optical recording and storage devices etc.. (I) is protected from oxidn. and so has good coercive force and recording performance stability.</p> |
申请人 |
SHARP K.K., OSAKA, JP |
发明人 |
OHTA, KENJI, YAO-SHI OSAKA-FU, JP;TAKAHASHI, AKIRA, NARA-SHI NARA-KEN, JP;HIROKANE, JUNJI, TENRI-SHI NARA-KEN, JP;KATAYAMA, HIROYUKI, NARA-SHI NARA-KEN, JP;YAMAOKA, HIDEYOSHI, MATSUBARA-SHI OKASA-FU, JP |