| 摘要 |
PURPOSE:To introduce required internal signals to a testing electrode without increasing an occupied area and without reducing the signal transmission speed of the internal signal by forming MOSFET's which create driving signals of the test electrode under the test electrode. CONSTITUTION:Driving MOSFET's Q1 and Q2 which amplify internal signals Di and Di' and transmit them to an electrode P are formed on a P<-> type silicon semiconductor substrate SUB under the electrode P. In other words, three N<+> type semiconductor regions S and S, D are formed. The semiconductor regions S and S, D form the source and the drain of the MOSFET Q1. The semiconductor regions S, D and D form the source and the drain of the MOSFET Q2. Therefore, the semiconductor region S, D can function as the drain of the MOSFET Q1 and as the source of the MOSFET Q2 and can be utilized as a common junction point with which the MOSFET's Q1and Q2 are connected in series. |
