Semiconductor light-emitting device.

摘要

A semiconductor light-emitting element includes a semiconductor substrate (11) having a first conductivity type, a lower cladding layer (13) formed on the semi-conductor substrate (11), and constituted by an InGaA l P-based compound having the first conductivity type, an active layer (14) formed on the lower cladding layer (13), and constituted by a member selected from the group consisting of GaAs, GaA l As, and InGaAs, and an upper cladding layer (15) formed on the active layer (14), and constituted by the InGaA l P-based compound having a second conductivity type, wherein the InGaA l P-based compound is represented by a formula Iny(Ga1-xA l x)yP wherein x is 0.3 to 0.7 and y is 0.45 to 0.55. The element also includes a doped active layer and a heterostructure in which the valence band offsets are larger than the conduction band offsets. <IMAGE>