SEMICONDUCTOR MEMORY DEVICE USING RESONANT-TUNNELING TRANSISTOR,申请号EP19880401025-传众专利搜索

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发明名称	SEMICONDUCTOR MEMORY DEVICE USING RESONANT-TUNNELING TRANSISTOR
摘要
申请公布号	EP0289420(B1)	申请公布日期	1993.08.04
申请号	EP19880401025	申请日期	1988.04.26
申请人	FUJITSU LIMITED	发明人	MORI, TOSHIHIKO;FUTATSUGI, TOSHIRO
分类号	G11C11/39	主分类号	G11C11/39
代理机构		代理人
主权项
地址

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