| 发明名称 |
Semiconductor substrate and method for preparing same. |
| 摘要 |
<p>A semiconductor substrate comprises an insulating layer and a compound semiconductor monocrystal thin film formed on said insulating layer, the thermal expansion coefficient of said insulating layer being in the range of 60%-140% of that of said monocrystal thin film.</p> |
| 申请公布号 |
EP0553856(A2) |
申请公布日期 |
1993.08.04 |
| 申请号 |
EP19930101417 |
申请日期 |
1993.01.29 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SAKAGUCHI, KIYOFUMI;YONEHARA, TAKAO;MIYAWAKI, MAMORU |
| 分类号 |
H01L21/20;H01L21/306;H01L21/762;H01L31/18 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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