发明名称 Method and apparatus for generating plasma, and semiconductor processing methods.
摘要 <p>Plasma processing apparatus has a waveguide (19) along which microwaves are propagated from a microwave generator (1) to a plasma-forming region in a low-pressure processing chamber. The waveguide (19) has a large cross-sectional area, to enable a large region of plasma to be achieved. Uniformity and stability of the plasma are improved by a mode restrictor (20) which inhibits mixing of propagation modes which is otherwise liable to occur in a wide waveguide. The mode restrictor (20) consists of electrically-conductive dividers which divide the waveguide cross-section into an array of sub-guides before the plasma-forming region. &lt;IMAGE&gt; &lt;IMAGE&gt;</p>
申请公布号 EP0554039(A1) 申请公布日期 1993.08.04
申请号 EP19930300534 申请日期 1993.01.26
申请人 HITACHI, LTD. 发明人 KAKEHI, YUTAKA;KAWASAKI, YOSHINAO;SUZUKI, KEIZO;NOJIRI, KAZUO;ENAMI, HIROMICHI;KAJI, TETSUNORI;WATANABE, SEIICHI;OGAWA, YOSHIFUMI
分类号 C23C16/511;H01J37/32 主分类号 C23C16/511
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