Thermal dissipation of integrated circuits using diamond paths.

摘要

Dissipation of thermal energy from an isolated active silicon region 16 is provided by etching a trench or hole 18 through the isolated active silicon region 16 and the underlying insulative layer 14 to a supportive silicon substrate 12; passivating 20 the walls of the trench; and, filling the trench with CVD diamond material 22.