发明名称 |
Semiconductor substrate and process for producing the same. |
摘要 |
<p>A process for producing a semiconductor substrate comprises the steps of forming a porous layer in a first substrate comprising monocrystalline silicon; forming a protective film on a side wall of the pores of the porous layer; forming a nonporous monocrystalline silicon layer on the porous layer; bonding the surface of the nonporous monocrystalline silicon layer onto a second substrate with interposition of an insulating layer; and etching off selectively the porous layer by use of a chemical etching solution.</p> |
申请公布号 |
EP0553859(A2) |
申请公布日期 |
1993.08.04 |
申请号 |
EP19930101420 |
申请日期 |
1993.01.29 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SATO, NOBUHIKO;YONEHARA, TAKAO |
分类号 |
H01L21/02;H01L21/20;H01L21/306;H01L21/762;H01L27/12 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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