发明名称 |
METAL DEPOSITION |
摘要 |
In the deposition of metal on solid substrates by a Metal Organic Chemical Deposition process, an improvement comprises the provision of vapors of a precursor of the metal by passing an inert carrier gas through a mixture of the metal precursor and a liquid having a vapor pressure at ambient temperature lower than that of the metal precursor and in which the metal precursor is at least partially soluble.
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申请公布号 |
US5232869(A) |
申请公布日期 |
1993.08.03 |
申请号 |
US19920920735 |
申请日期 |
1992.07.28 |
申请人 |
SHELL RESEARCH LIMITED |
发明人 |
FRIGO, DARIO M.;GAL, ANTONIUS W. |
分类号 |
C23C16/30;C23C16/44;C23C16/448;C23C16/455;C30B25/02;C30B25/14 |
主分类号 |
C23C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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