| 摘要 |
PURPOSE:To produce the integrated circuit which is constituted by forming wiring layers via a barrier layer on a substrate and forming the barrier layer of a Ti-Ni compd. which is gradually increased in a Ti content and N content from the lower part to the upper part and has an excellent electrical contact property and barrier property. CONSTITUTION:A gaseous mixture contg. gaseous N2 or gaseous mixture contg. a nitrogen element is introduced near an Si substrate 62 in a vacuum chamber while the introduction rate thereof is successively regulated at the time of producing the integrated circuit. While the Si substrate 62 is kept irradiated with inert gaseous ions, the surface of the Si substrate 62 is irradiated with the ions by a cluster type ion source, by which the Ti layer 45 is formed thereon. Further, TiNx layers 68, 67 in which the N content (X) increases gradually are formed thereon by regulating the supply rate of the N-contg. gas. The barrier layer 61 is formed of the Ti layer 65 and the TiNx layers 68, 67 varying in the value X. The wiring layer 60 is formed thereon. The integrated circuit formed with the high-quality barrier layer 61 having the excellent electrical contact property and barrier property is produced. |
