| 摘要 |
PURPOSE:To improve excellent moisture resistance, continuous repetitive use characteristic, electrical breakdown strength, etc., by forming the layer constitu tion of a light receiving material having a photoconductive layer constituted of amorphous silicon into specific layer constitution. CONSTITUTION:The light receiving material is constituted of a long wavelength photosensitive layer consisting of an inorg. material contg. silicon atoms and germanium atoms and having sensitivity to long wavelength light, charge injec tion blocking layer consisting of a polycrystalline material contg. a material to control conductivity, photoconductive layer which is constituted of an amor phous material essentially consisting of silicon atoms and contg. >=1 kinds of hydrogen atoms and halogen atoms in the constituting elements and exhibits photoconductivity and surface layer consisting of an amorphous material contg. silicon, carbon and hydrogen atoms as the constituting elements on a substrate. The density distribution of the layer thickness direction of the constituting elements is so changed as to obtain the matching characteristic of the optical band gap at the boundary face of the surface layer and the photoconductive layer, by which the max. concn. of the hydrogen atoms in the surface layer is made 41-70atom%. |
