发明名称 Photovoltaic cell with thin CdS layer
摘要 <p>An improved photovoltaic panel and method of forming a photovoltaic panel are disclosed for producing a high efficiency CdS/CdTe photovoltaic cell. The photovoltaic panel of the present invention is initially formed with a substantially thick Cds layer, and the effective thickness of the CdS layer is substantially reduced during regrowth to both form larger diameter CdTe crystals and substantially reduce the effective thickness of the CdS layer by diffusion into the CdTe layer such that a majority of sunlight having a wavelength less than 520 nm passes through the CdS layer to the photovoltaic junction. Shorting of individual cells is substantially minimized by providing a conductive layer which is formed from two tin oxide layers, each having substantially dissimilar electrical conductivity, such that an electrically-conductive tin oxide layer interconnects the plurality of photovoltaic cells, while the comparatively low conductivity tin oxide layer prevents shorting of a cell. The electron density of the low conductivity tin oxide layer may be adjusted to be within approximately three orders of magnitude of the presumed electron density of the CdTe layer, such that a energy-producing junction is formed in any area of flaws in the CdS layer by the CdTe layer and the tin oxide layer. The photovoltaic panel of the present invention has a low material and manufacturing cost, yet produces a surprisingly high efficiency to produce a low cost per output watt photovoltaic panel.</p>
申请公布号 AU3469293(A) 申请公布日期 1993.08.03
申请号 AU19930034692 申请日期 1993.01.13
申请人 PHOTON ENERGY, INC. 发明人 JOHN F JORDAN;SCOTT P ALBRIGHT;RHODES CHAMBERLIN
分类号 H01L31/04;H01L27/142;H01L31/0224;H01L31/073;H01L31/18;(IPC1-7):H01L31/042 主分类号 H01L31/04
代理机构 代理人
主权项
地址