| 摘要 |
A semiconductor device such as a semiconductor memory has a semiconductor chip bonded to an upper surface of a lead frame die pad, a polyimide film bonded to the upper surface of the semiconductor chip, and a quartz plate having a recess defined in a lower surface thereof, the quartz plate being bonded to an upper surface of the polyimide film with the recess being positioned over the integrated circuit of the semiconductor chip. The recess provides a gap between the polyimide film and the quartz plate for absorbing compressive stresses applied to the semiconductor device. The polyimide film, rather than the quartz plate, may have the recess. A plurality of leads are connected to the electrodes of the semiconductor chip by connecting wires. The lead frame, the semiconductor chip, the polyimide film, the quartz plate, the leads, and the connecting wires are sealed in a resin case. The semiconductor device may additionally have a light-shielding film disposed on the quartz plate for preventing external light from being applied to the semiconductor chip.
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