GUARD RING STRUCTURE WITH GRADED BE IMPLANTATION

摘要

PCT No. PCT/GB90/00895 Sec. 371 Date Jan. 24, 1992 Sec. 102(e) Date Jan. 24, 1992 PCT Filed Jun. 8, 1990 PCT Pub. No. WO90/15446 PCT Pub. Date Dec. 13, 1990.An avalanche photodiode having a beryllium guard ring. The beryllium is implanted at a dosage of at least 5x1014 per cm2 and subsequently annealed to provide a guard ring profile with a p+core and a superlinearly graded tail. The doping profile of the guard ring immediately adjacent the core is superlogarithmic.