发明名称 |
PHOTOMASK, EXPOSING METHOD AND PROJECTION ALIGNER |
摘要 |
<p>PURPOSE:To form a reticule pattern by projection aligning with a high resolution and large depth of focus. CONSTITUTION:A diffraction grating pattern RG1 for diffracting illumination light is formed on the glass surface of a reticule so as to face the reticule pattern RP1 of the reticule 1 and the + or -1st order diffracted light diffracted in the pattern is inclined by the angle corresponding to the pitch PR of the reticule pattern RP1 with respect to the reticule 1. The reticule pattern RP1 is irradiated with the light. This, the inclined illumination of the reticule pattern is enabled without improving the optical system for illumination.</p> |
申请公布号 |
JPH05188577(A) |
申请公布日期 |
1993.07.30 |
申请号 |
JP19920006406 |
申请日期 |
1992.01.17 |
申请人 |
NIKON CORP |
发明人 |
HIRUKAWA SHIGERU;SHIRAISHI NAOMASA;KAMEYAMA MASAOMI |
分类号 |
G03F1/26;G03F1/70;G03F7/20;H01L21/027;H01L21/30 |
主分类号 |
G03F1/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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