| 摘要 |
PURPOSE: To form a field oxide area and a channel stop by implanting ions of comparatively low energy, and to form also a complementary well of a CMOS transistor(TR) by ion-implantation used for the formation of the channel stop. CONSTITUTION: A silicon dioxide layer 22 is formed on a substrate 20 and etched to form silicon oxide members 24, 26. Then a masking member is formed. Then phosphorus is ion-implanted up to an about 1×10<-13> cm<-2> doping level at an about 170Kev energy level. The substrate 20 is heated to allow field oxide areas 32a to 32c to grow during the period of the oxidation step. The structure of an n-type well 36 is formed as the processing result. Then a masking member 35 is formed on the substrate 20 and boron is ion-implanted as the 2nd ion-implantation by the same condition as the preceding one, thereby forming a p-type well 38. Consequently p-type and n-type wells 38, 36 are included in the substrate 20 and a junction part 14 is formed between both the wells 38, 36.
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